Name: Dr. K. Vinod Kumar Designation: Assistant Professor Phone: 04366-277230 Email:vinodkumar@cutn.ac.in
Biographic Sketch:
Dr. K Vinod Kumar hails from Sangareddy District, Telangana State, India.He completed his B.Sc. from Nizam College, Osmania University, Hyderabad in 2013 followed by his M.Sc. in Physics from School of Physics, University of Hyderabad in 2015. He qualified National Eligibility Test (NET) for UGC – CSIR Scientific Research fellowship (JRF/SRF)and lectureshipin 2014.He obtained Ph.D. in Physics from University of Hyderabad in 2022 under the supervision of Prof. S V S Nageswara Rao. During his Ph.D. he worked on Electronic Excitation Induced Effects on the Structural and Electrical Properties of HfO2 thin films for the application of MOS devices. He also worked on the fabrication of high density Au nanoparticles in high-k dielectric media by Laser Annealing for the application of Non-volatile memory devices and SERS substrates. He was an IoE Post-doctoral Research Fellow (IoE-PDRF) at School of Physics, University of Hyderabad in 2023-24 with the research group of Prof. K C James Raju. During this period, he worked on a project titled “The influence of oxygen vacancies on the ferroelectric properties of HfO2 films for the application of Negative Capacitance based Non-volatile memory devices”. He is a lifetime member of Ion Beam Society of India (IBSI). Dr. Vinod Kumar is now currently working as an Assistant Professor in the Department of Physics, School of Basic and Applied Sciences, Central University of Tamil Nadu.
Research Highlights :
Dr. K. Vinod Kumar’s research group is keen to exploit the ferroelectric properties of high-k dielectric films for the application of Negative Capacitance based Non-volatile memory devices. His research group explores the enhancement of ferroelectricity in high-k dielectric materials through ion implantation or irradiation. Further, his research interest also involves electronic excitation induced phase transformations of thin films by Laser Annealing or Ion irradiation and their consequent effects on the ferroelectric or electrical properties. His research also includes the fabrication of high density metal nanoparticles in the dielectric media for SERS substrates and Non-volatile memory device applications.
Recent Publications :
K. Vinod Kumar, J. Pundareekam Goud, Kanaka Ravi Kumar, K. C. James Raju, S. V. S. Nageswara Rao, “Laser Annealing of Au/HfO2 bi-layers to Fabricate Au Nanoparticles without altering the Phase of HfO2 for Applications in SERS and Memory Devices”, Journal of Materials Science: Materials in Electronics 2022, 33, 6657-6669.
K. Vinod Kumar, N. Arun, A. Mangababu, Sunil Ojha, S. V. S. Nageswara Rao, A. P. Pathak “120 MeV Ag ion irradiation induced intermixing, grain fragmentation in HfO2/GaOx thin films and consequent effects on the electrical properties of HfO2/GaOx/Si-based MOS capacitors”, Rad. Eff. Deff. In Sol.2020, 175 (1-2), 150-159.
K. Vinod Kumar, N. Arun, A. P. Pathak, S. V. S. Nageswara Rao, “Effects of Thermal Annealing and Gamma Irradiation on HfO2 Thin Films deposited on GaAs”, AIP Conf. Proc. 2019, 2115, 030021-1–030021-4.
N. Arun, L.D. Varma Sangani, K. Vinod Kumar, A. Mangababu, M. Ghanashyam Krishna, A. P. Pathak, and S.V.S. Nageswara Rao, “Effects of swift heavy ion irradiation on the performance of HfO2-based resistive random access memory devices”, Journal of Materials Science: Materials in Electronics, 2022, 32:2973–2986.
A. Mangababu, N. Arun, K. Vinod Kumar, A. P. Pathak, S. V. S. Nageswara Rao, “Metal nanoparticles in dielectric media: Physical vapor deposited HfO2& Ag multilayers for MOS device and SPR applications”, AIP Conf. Proc.2020, 2265, 030271.
M. Dhanunjaya, K. Vinod Kumar, N. Manikanthababu, S.V.S. Nageswara Rao, A.P. Pathak, “Swift heavy ion irradiation assisted Si nanoparticle formation in HfSiOxnano-composite thin films deposited by RF magnetron sputtering method”, Nuclear Inst. and Methods in Physics Research B2019, 446, 37–42.
N. Arun, K. Vinod Kumar, A. Mangababu, S. V. S. Nageswara Rao, A. P. Pathak, “Influence of the bottom metal electrode and gamma irradiation effects on the performance of HfO2-based RRAM devices”, Rad. Eff. and Def. in Sol.2019, 174 (1-2), 66-75.
N. Arun, J. Prabana, K. Vinod Kumar, A. P. Pathak, S. V. S. Nageswara Rao, “Fabrication of HfO2 based MOS and RRAM devices: A study of Thermal Annealing Effects on these Devices”, AIP Conf. Proc.2019, 2115, 030216-1–030216-4.
N. Arun, K. Vinod Kumar, A. P. Pathak, D. K. Avasthi, S. V. S. Nageswara Rao, “Hafnia based resistive switching devices for non-volatile memory applications and Effects of gamma irradiation on device performance”, Rad. Eff. Def. In Sol. 2018, 173 (3-4), 239-249.
